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Journal of Applied Physics

Volumn 106, Issue 9, 2009, Pages

The combined influence of connectivity and disorder on Jc and Tc performances in Mgx B2 +10 wt % SiC

(5) Li, W X a,b Zeng, R a Lu, L a Li, Y b Dou, S X a

a UNIVERSITY OF WOLLONGONG (Australia)

b SHANGHAI UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT MECHANISMS; DIFFERENT-MAGNETIC FIELDS; EXCESS MG; HIGH CONNECTIVITY; IRREVERSIBILITY FIELDS; RAMAN SCATTERING MEASUREMENTS; RESISTIVITY PROPERTIES;

MAGNETIC FIELDS; RAMAN SCATTERING;

SILICON CARBIDE;

EID: 70450265218 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3253757 Document Type: Article

Times cited : (15)

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