Peak channel temperature of graphene-based transistors

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 8, 2010, Pages 4889-4892

  Ko, Geunwoo ^a   Jung, Younghun ^a   Kim, Jihyun ^a  

^a Korea University   (South Korea)

Author keywords

Channel temperature; Graphene; Transistor

Indexed keywords

CHANNEL TEMPERATURE; CURRENT-VOLTAGE DATA; DEVICE PERFORMANCE; DISSIPATED POWER; FINITE ELEMENT ANALYSIS; HIGH OPERATING TEMPERATURE; HIGH-SPEED ELECTRONIC DEVICES; OHMIC METALLIZATION; OPERATING TEMPERATURE; SI SUBSTRATES; THERMAL MANAGEMENT;

FINITE ELEMENT METHOD; SILICON COMPOUNDS; TEMPERATURE;

GRAPHENE;

EID: 79955422286     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2414     Document Type: Conference Paper

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