Design rules and characterisation of electrically pumped vertical external cavity surface emitting lasers

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Orchard, Jonathan R ^a   Childs, David T D ^a   Lin, Li Chih ^a   Stevens, Ben J ^a   Williams, David M ^a   Hogg, Richard A ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CARRIER DISTRIBUTIONS; CARRIER INJECTION; CHARACTERISATION; CURRENT SPREADING; DESIGN RULES; ELECTRICALLY PUMPED; EXPERIMENTAL STUDIES; GAIN CHARACTERISTIC; LAYER THICKNESS; NEAR FIELDS; NONUNIFORM; OPERATING CHARACTERISTICS; OUTPUT POWER; SUBSTRATE DOPING; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

DOPING (ADDITIVES); PUMPING (LASER); SURFACE EMITTING LASERS;

SUBSTRATES;

EID: 79955420097     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DG05     Document Type: Article

References (21)

1. A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. H. Hoogland: J. Phys. D 37 (2004) 75.
2. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian: IEEE J. Sel. Top. Quantum Electron. 5 (1999) 561.
3. L. Fan, M. Fallahi, J. T. Murray, R. Bedford, A. R. Zakharian, J. Hader, J. V. Moloney, W. Stolz, and S. W. Koch: Appl. Phys. Lett. 88 (2006) 21105.
4. G. A. Keeler, D. K. Serkland, K. M. Geib, G. M. Peake, and A. Mar: IEEE Photonics Technol. Lett. 17 (2005) 522.
5. E. M. Strzelecka, J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, D. Lee, J. P. Watson, K. W. Kennedy, G. P. Carey, H. Zhou, W. Ha, B. D. Cantos, W. R. Hitchens, D. L. Heald, V. V. Doan, and K. L. Lear: Proc. SPIE 4993 (2003) 57.
6. G. A. Keeler, D. K. Serkland, K. M. Geib, G. M. Peake, and A. Mar: IEEE Photonics Technol. Lett. 17 (2005) 522.
7. E. U. Rafailov, W. Sibbett, A. Mooradian, J. G. McInerney, H. Karlsson, S. Wang, and F. Laurell: Opt. Lett. 28 (2003) 2091.
8. K. Jasim, Q. Zhang, A. V. Nurmikko, E. Ippen, A. Mooradian, G. Carey, and W. Ha: Electron. Lett. 40 (2004) 34.
9. I. Kardosh, F. Demaria, F. Rinaldi, M. C. Riedl, and R. Michalzik: Electron. Lett. 44 (2008) 524.
10. M. E. Kurdi, S. Bouchoule, A. Bousseksou, I. Sagnes, A. Plais, M. Strassner, C. Symonds, A. Garnache, and J. Jacquet: Electon. Lett. 40 (2004) 671.
11. A. Khan, K. Woodbridge, M. Ghisoni, G. Parry, G. Beyer, J. S. Roberts, M. Pate, and G. Hill: J. Appl. Phys. 77 (1995) 4921.
12. G. W. Pickrell, D. A. Louderback, M. A. Fish, J. J. Hindi, H. C. Lin, M. C. Simpson, P. S. Guilfoyle, and K. L. Lear: J. Cryst. Growth 280 (2005) 54.
13. M. Hong, J. P. Mannaerts, J. M. Hong, R. J. Fischer, K. Tai, J. Kwo, J. M. Vandenberg, Y. H. Wang, and J. Gamelin: J. Cryst. Growth 111 (1991) 1071.
14. K. Kurihara, T. Numai, I. Ogura, A. Yasuda, M. Sugimoto, and K. Kasahara: J. Appl. Phys. 73 (1993) 21.
15. R. F. Nabiev and C. J. Chang-Hasnain: IEEE Photonics Technol. Lett. 7 (1995) 733.
16. T. Sale: IEE Proc.-Optoelectron. 142 (1995) 37.
17. D. B. Young, J. W. Scott, F. H. Peters, M. G. Peters, M. L. Majewski, B. J. Thibeault, S. W. Corzine, and L. A. Coldren: IEEE J. Quantum Electron. 29 (1993) 2013.
18. Novalux Inc: III-Vs Rev. 14 [5] (2001) 38.
19. P. Kreuter, B. Witzigmann, D. J. H. C. Maas, Y. Barbarin, T. Südmeyer, and U. Keller: Appl. Phys. B 91 (2008) 257.
20. L. A. Coldren and S. W. Corzine: Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995) p. 80.
21. K. H. Ha and Y. H. Lee: Jpn. J. Appl. Phys. 37 (1998) 372.