SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 7, 2011, Pages

Dependence of magnetoresistance on dopant density in phosphorous doped silicon

Author keywords

[No Author keywords available]

Indexed keywords

CLASSICAL THEORY; IONIZED DONORS; PHOSPHOROUS DOPED SILICON; TRANSVERSE MAGNETORESISTANCE;

DOPING (ADDITIVES); ELECTRIC RESISTANCE; MAGNETIC FIELDS; MAGNETORESISTANCE; PHOSPHORUS;

MAGNETOELECTRONICS;

EID: 79955411261 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3536663 Document Type: Conference Paper

Times cited : (14)

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