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Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Magnetism induced by boron impurities in amorphous silicon

(7) Zhu, Y a Du, C L a Shi, D N a Zhang, K C c Ma, C L d Gong, S J e Yang, Z Q b

a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS (China)

b FUDAN UNIVERSITY (China)

c BOHAI UNIVERSITY (China)

d SUZHOU UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

e EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; IMPURITIES IN; IMPURITY ATOMS; P-TYPE IMPURITIES; ROOM TEMPERATURE; SI ATOMS; SPIN-POLARIZED; STONER CRITERION; UNSATURATED BONDS;

BORON; CALCULATIONS; IMPURITIES; MAGNETIC MOMENTS;

AMORPHOUS SILICON;

EID: 79955397228 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3565051 Document Type: Conference Paper

Times cited : (1)

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