Modeling of transient and steady-state dark current in amorphous silicon p-i-n photodiodes

Current Applied Physics

Volumn 9, Issue 6, 2009, Pages 1393-1396

  Mahmood, S A ^a   Kabir, M Z ^a  

^a Gina Cody School of Engineering and Computer Science   (Canada)

Author keywords

Amorphous silicon; Carrier injection; Dark current; Imaging sensors; p i interface; p i n photodiode; Solar cell; Thermal generation

Indexed keywords

CARRIER INJECTION; IMAGING SENSORS; P-I INTERFACE; P-I-N PHOTODIODE; THERMAL GENERATION;

DARK CURRENTS; DEFECT DENSITY; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; PHOTOVOLTAIC CELLS; SENSORS; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 67349116439     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.03.011     Document Type: Article

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