Comparison of mercuric iodide and lead iodide X-ray detectors for X-ray imaging applications

IEEE Transactions on Nuclear Science

Volumn 53, Issue 5, 2006, Pages 2506-2512

  Zentai, G ^a,b   Partain, L ^a,b   Pavlyuchkova, R ^b   Proano, C ^b   Schieber, M ^a,c,d   Shah, K ^e   Bennett, P ^e   Melekhov, L ^d   Gilboa, H ^d  

^a IEEE   (United States)

^b Ginzton Technology Center   (United States)

^c HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^d Real Time Radiography   (Israel)

^e RADIATION MONITORING DEVICES INC   (United States)

Author keywords

Lead compounds; Medical imaging; Mercury compounds; Polycrystalline semiconductors; Thin film devices; X ray image sensors; X ray imaging

Indexed keywords

DEPOSITION PARAMETERS; POLYCRYSTALLINE SEMICONDUCTORS; X-RAY IMAGE SENSORS; X-RAY IMAGING;

CHARGE TRANSFER; DEPOSITION; ELECTRIC FIELD EFFECTS; LEAD COMPOUNDS; LEAKAGE CURRENTS; MEDICAL IMAGING; MERCURY COMPOUNDS; OPTICAL TRANSFER FUNCTION; THIN FILM TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

RADIATION DETECTORS;

EID: 33750424074     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.880975     Document Type: Article

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