Temperature dependent structural evolution of graphene layers on 4H-SiC(0001)

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 797-800

  Sonde, Sushant ^a,b   Vecchio, Carmelo ^a,b   Giannazzo, Filippo ^a   Bongiornio, Corrado ^a   Di Franco, Salvatore ^a   Rambach, Martin ^c   Rimini, Emanuele ^a,d   Raineri, Vito ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c Centrotherm Thermal Solutions GmbH + Co KG   (Germany)

^d UNIVERSITY OF CATANIA   (Italy)

Author keywords

Atomic force microscopy; Epitaxial graphene; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GRAPHENE; GRAPHENE LAYERS; MORPHOLOGICAL TRANSFORMATIONS; OFF-AXIS; SIC SUBSTRATES; STRUCTURAL EVOLUTION; TAPPING-MODE ATOMIC FORCE MICROSCOPY; TEMPERATURE DEPENDENT;

GRAPHENE;

EID: 79955106784     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.797     Document Type: Conference Paper

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