Optical properties of GaSe:S crystals in terahertz frequency range

Guangxue Jingmi Gongcheng/Optics and Precision Engineering

Volumn 19, Issue 2, 2011, Pages 354-359

  Luo, Zhi Wei ^a   Gu, Xin An ^a   Zhu, Wei Zhen ^a   Tang, Wei Cong ^a   Yury, Andreev ^b   Lanskii, Grigory ^b   Morozov, Alexander ^b   Zuev, Vladimir ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF MONITORING OF CLIMATIC AND ECOLOGICAL SYSTEMS   (Russian Federation)

Author keywords

Sulfur doped GaSe crystals; Terahertz time domain spectroscopy; THz radiation

Indexed keywords

ABSORPTION COEFFICIENTS; DOWNCONVERSION; FREQUENCY-DEPENDENT; GASE CRYSTALS; PROFILE MEASUREMENT; TERAHERTZ FREQUENCY RANGE; TERAHERTZ PULSE; TERAHERTZ TIME-DOMAIN SPECTROSCOPY; THZ RADIATION; VIBRATION MODES;

ABSORPTION; CRYSTALS; OPTICAL CONSTANTS; PLASMONS; REFLECTOMETERS; REFRACTIVE INDEX; SPECTROPHOTOMETERS; SULFUR; TERAHERTZ WAVES;

TERAHERTZ SPECTROSCOPY;

EID: 79955053638     PISSN: 1004924X     EISSN: None     Source Type: Journal    
DOI: 10.3788/OPE.20111902.0354     Document Type: Article

References (22)

1. ZHANG X C, HU B B, DARROW J T, et al.. Generation of femtosecond electromagnetic pulses from semiconductor surfaces[J]. Appl. Phys. Lett., 1990, 56: 1011-1013.
2. DAVIES A G, LINFIELD E H, JOHNSTON M B. The development of terahertz sources and their applications[J]. Phys. Med. Biol., 2002, 47: 3679-3689.
3. KLAPPENBERGER F, RENK K F. Transient-pulse nonlinear spectroscopy with the radiation of a multimode THz gas laser[J]. Int. J. of Infrar. and Millim. Waves, 2003, 24: 1405-1414.
4. CARR G L, MICHAEL C M, WAYNE R M, et al.. High-power terahertz radiation from relativistic electrons[J]. Nature, 2002, 420: 153-156.
5. KOEHLER R, TREDICUCCI A, BELTRAM F, et al.. Terahertz semiconductor-heterostructure laser[J]. Nature, 2002, 417: 156-159.
6. DMITRIEV V G, GURZADYAN G G, NIKOGOSYAN D N. Handbook for Nonlinear Crystals[M]. Berlin: Springer, 1997: 166-182.
7. FERNELIUS N C. Properties of gallium selenide single crystal[J]. Prog. Cryst. Growth and Charact., 1994, 28: 275-353.
8. SHI W, DING Y J. A monochromatic and high-power terahertz source tunable in the ranges of 2.7-38.4 and 58.2-3540 μm for variety of potential applications[J]. Appl. Phys. Lett., 2004, 84: 1635-1637.
9. HSU Y K, CHANG C S, HSIEH W F. Photoluminescence study of GaSe doped with Er[J]. Jpn. J. Appl. Phys., 2003, 42: 4222-4225.
10. DAS S, GHOSH C, VOEVODINA O G, et al.. Modified GaSe crystal as a parametric frequency converter[J]. Appl. Phys. B, 2005, 82: 43-46.
11. SUHRE D R, SINGH N B, BALAKRISHNA V, et al.. Hopkins improved crystal quality and harmonic generation in GaSe doped with indium[J]. Opt. Lett., 1997, 22: 775-777.
12. TIKHOMIROV A A, ANDREEV Y M, LANSKII G V, et al.. Doped GaSe nonlinear crystal[J]. SPIE, 2006, 6258: 625809-1-625809-9.
13. HSU Y K, CHEN C W, HUANG J Y, et al.. Erbium doped GaSe crystal for mid-IR applications[J]. Opt. Express, 2006, 14: 5484-5491.
14. x, x≤0.412, crystals at room temperature[J]. Opt. Express, 2008, 16: 9951-9957.
15. x crystals[J]. Mater. Sci. and Eng. B, 2006, 128: 205-210.
16. WU Q, ZHANG X C. Free-space electro-optic sampling of terahertz beams[J]. Appl. Phys. Lett., 1995, 67: 3523-3525.
17. 2 with terahertz time-domain spectroscopy[J]. Appl. Phys. Lett., 2003, 82: 4633-4635.
18. x series layered crystal[J]. J. Cryst. Growth, 2005, 279: 321-328.
19. x(0≤x≤1) series layered crystals[J]. Solid State Comm., 2005, 136: 591-594.
20. 1-x solid solutions[J]. Phys. Stat. Sol. A, 1978, 48: 293-296.
21. YOSHIDA H, NAKASHIMA S, MITSUISHI A. Phonon Raman spectra of layer compound GaSe[J]. Phys. Stat. Sol. B, 1973, 59: 655-666.
22. CHEN C W, TANG T T, LIN S L, et al.. Optical properties and potential applications of ε-GaSe at terahertz frequencies[J]. J. Opt. Soc. Am. B, 2009, 26: 58-65.