Direct or indirect semiconductor: The role of stacking fault in h-BN

Physica B: Condensed Matter

Volumn 406, Issue 11, 2011, Pages 2293-2297

  Yin, J L ^a   Hu, M L ^a   Yu, Zhizhou ^a   Zhang, C X ^a   Sun, L Z ^a   Zhong, J X ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

Electronic property; Hexagonal boron nitride; Stacking fault

Indexed keywords

BAND GAPS; FIRST PRINCIPLES METHOD; FORMATION ENERGIES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); INDIRECT SEMICONDUCTOR; SINGLE LAYER; STACKING SEQUENCE;

BORON; BORON NITRIDE; NITRIDES;

ELECTRONIC PROPERTIES;

EID: 79955024115     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.03.059     Document Type: Article

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