Tailoring interfaces for electrochemical synthesis of semiconductor films: BiVO4, Bi2O3, or composites

Journal of Physical Chemistry C

Volumn 115, Issue 15, 2011, Pages 7793-7800

  Myung, Noseung ^a   Ham, Sunyoung ^b   Choi, Seungun ^a   Chae, Yujin ^a   Kim, Whan Gi ^a   Jeon, Young Jin ^a   Paeng, Ki Jung ^b   Chanmanee, Wilaiwan ^c   De Tacconi, Norma R ^c   Rajeshwar, Krishnan ^c  

^a Konkuk University   (South Korea)

^b Yonsei University Wonju   (South Korea)

^c UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDIC ELECTROLYTES; AG/AGCL; ALKALINE ELECTROLYTES; BISMUTH FILM; DEPOSITION POTENTIAL; ELECTROCHEMICAL SYNTHESIS; ELECTRODEPOSITED FILMS; EX SITU; HYDROXIDE IONS; IN-SITU; MECHANISTIC ASPECTS; MODIFIED ELECTRODES; N-TYPE SEMICONDUCTORS; PHOTOELECTROCHEMICALS; POSITIVE POTENTIAL; PT ELECTRODE; SEM; SEMICONDUCTOR FILMS; STRIPPING EFFICIENCY; SUPPORTING ELECTROLYTE; TWO STEP METHOD; XPS; XRD;

ALKALINITY; BISMUTH; ELECTRODEPOSITION; PLATINUM; SYNTHESIS (CHEMICAL); VANADIUM;

ELECTROLYTES;

EID: 79954581223     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp200632f     Document Type: Article

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