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Volumn 46, Issue 11, 2011, Pages 4034-4045
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X-ray line broadening and photoelectrochemical studies on CdSe thin films
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING TEMPERATURES;
CADMIUM SELENIDES;
CATHODIC ELECTRODEPOSITION;
CDSE THIN FILMS;
CONDUCTING GLASS;
DEPOSITED FILMS;
DEPOSITION POTENTIAL;
DIELECTRIC CONSTANTS;
DISLOCATION DENSITIES;
ENERGY DISPERSIVE ANALYSIS;
EXPERIMENTAL OBSERVATION;
EXTINCTION COEFFICIENTS;
FILM COMPOSITION;
HEXAGONAL STRUCTURES;
INDIUM DOPED TIN OXIDES;
MICRO-STRAIN;
MICROSTRUCTURAL PARAMETERS;
OPTICAL ABSORPTION;
OPTICAL PARAMETER;
PACKING DENSITY;
PHOTOELECTROCHEMICAL SOLAR CELL;
PHOTOELECTROCHEMICAL TECHNIQUE;
PHOTOELECTROCHEMICALS;
POTENTIOSTATICS;
POWER OUTPUT CHARACTERISTICS;
PREFERENTIAL ORIENTATION;
SOLUTION PH;
STACKING FAULT PROBABILITY;
X-RAY LINE BROADENING;
X-RAY LINE PROFILE ANALYSIS;
ABSORPTION;
CADMIUM;
CADMIUM ALLOYS;
CADMIUM COMPOUNDS;
CONDUCTIVE FILMS;
CRYSTALLITE SIZE;
DEPOSITION;
DIFFRACTION;
DISPERSION (WAVES);
ELECTROCHEMISTRY;
ITO GLASS;
LIGHT ABSORPTION;
OXIDE FILMS;
PH;
REFRACTIVE INDEX;
SCANNING ELECTRON MICROSCOPY;
THIN FILMS;
TIN;
TIN OXIDES;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
X RAYS;
X RAY DIFFRACTION ANALYSIS;
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EID: 79953782409
PISSN: 00222461
EISSN: 15734803
Source Type: Journal
DOI: 10.1007/s10853-011-5332-z Document Type: Article |
Times cited : (20)
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References (33)
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