A MEMS-SOI 3D-magnetic field sensor

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2011, Pages 664-667

  Estrada, Horacio V ^a  

^a CENTRO NACIONAL DE METROLOGÍA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

3-D HALL SENSOR; DOPING LEVELS; FLEXIBLE POLYIMIDE; HALL ELEMENTS; HALL SENSOR; MAGNETIC FIELD SENSORS; NON-MAGNETIC MATERIALS; SOI WAFERS; WAFER THICKNESS;

HALL EFFECT TRANSDUCERS; MAGNETIC FIELDS; MAGNETIC MATERIALS; MECHANICAL ENGINEERING; MECHANICS; MEMS; POLYIMIDES; PROBES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SENSORS; THREE DIMENSIONAL;

SILICON WAFERS;

EID: 79953776197     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2011.5734512     Document Type: Conference Paper

References (8)

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