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Applied Physics Letters

Volumn 98, Issue 13, 2011, Pages

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3 Ti4 O12 by means of tin doping

(3) Ribeiro, Willian C a Araújo, Rafael G C a Bueno, Paulo R a

a SÃO PAULO STATE UNIVERSITY UNESP (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CAPACITOR MODELS; DIELECTRIC CONSTANTS; MATRIX; NANO-SIZED; NONLINEAR COEFFICIENT; NONOHMIC BEHAVIOR; VARISTOR CHARACTERISTICS;

DIELECTRIC LOSSES; DIELECTRIC RELAXATION; SEMICONDUCTOR DOPING; TIN;

STACKING FAULTS;

EID: 79953762179 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3574016 Document Type: Article

Times cited : (36)

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