Nanoscale effects and polaronic relaxation in CaCu3Ti 4O12 compounds

Solid State Communications

Volumn 151, Issue 2, 2011, Pages 173-176

  Ribeiro, Willian C ^a   Joanni, Ednan ^a   Savu, Raluca ^a   Bueno, Paulo R ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

A. CCTO; C. Stacking faults; D. Dielectric relaxation; D. NBLC model

Indexed keywords

A. CCTO; BARRIER LAYERS; C. STACKING FAULTS; D. DIELECTRIC RELAXATION; D. NBLC MODEL; DIELECTRIC PERMITTIVITIES; DIPOLAR RELAXATION; ELECTRONIC CONDUCTION; HIGH FREQUENCY; NANO-SIZED; NANOSCALE EFFECTS; POLARONIC FEATURES; RELAXATION FREQUENCY; SPECTROSCOPY MEASUREMENTS;

ACTIVATION ENERGY; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; ELECTRON ENERGY LOSS SPECTROSCOPY; STACKING FAULTS;

DIELECTRIC MATERIALS;

EID: 78650512586     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.10.034     Document Type: Article

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