Performance of MWIR and SWIR HgCdTe-based focal plane arrays at high operating temperatures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7660, Issue , 2010, Pages

  Melkonian, Leon ^a   Bangs, James ^a   Elizondo, Lee ^a   Ramey, Ron ^a   Guerrero, Ernesto ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

focal plane array; HgCdTe; high operating temperature; large format; molecular beam epitaxy; MWIR; SWIR

Indexed keywords

HGCDTE; HIGH OPERATING TEMPERATURE; LARGE FORMAT; MWIR; SWIR;

EPITAXIAL GROWTH; FOCAL PLANE ARRAYS; FOCUSING; INFRARED DETECTORS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; TEMPERATURE;

INFRARED RADIATION;

EID: 79953721491     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.850849     Document Type: Conference Paper

References (3)

1. Reddy M., Peterson J. M., Lofgreen D. D., Franklin J. A., Vang T., Smith E. P. G., Wehner J., Kasai G. A. I., Bangs J. W., Johnson S. M., "MBE growth of HgCdTe on large area Si and CdZnTe wafers for SWIR, MWIR and LWIR detection", Journal of Electronic Materials, Vol. 37, No. 9, 1274-1282 (2008).
2. Smith, E. P. G., Venzor, G. M., Petraitis, Y., Liguiri, M. V., Levy, A. R., Rabkin, C. K., Peterson, J. M., Reddy, M., Johnson, S. M., Bangs, J. W., "Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors", Journal of Electronic Materials, Vol. 36, No. 8, 1045-1051 (2007).
3. xTe", J. Appl. Phys. 53, 7099-7101 (1982).