Giant dielectric permittivity properties and relevant mechanism of NaCu3Ti3SbO12 ceramics

Journal of the American Ceramic Society

Volumn 94, Issue 4, 2011, Pages 1067-1072

  Hao, Wentao ^a   Zhang, Jialiang ^a   Tan, Yongqiang ^a   Zhao, Minglei ^a   Wang, Chunglei ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC FREQUENCIES; COMPLEX IMPEDANCE; CRYSTALLINE STRUCTURE; ELECTRODE POLARIZATIONS; GIANT DIELECTRIC PERMITTIVITY; HIGH TEMPERATURE; INTERNAL BARRIER LAYER CAPACITANCE EFFECTS; LOW FREQUENCY REGIONS; MEASURING FREQUENCY; PROPERTIES AND MICROSTRUCTURES; ROOM TEMPERATURE; SECONDARY PHASE; SINTERING TEMPERATURES; SOLID-STATE REACTION TECHNIQUES;

CERAMIC MATERIALS; DIELECTRIC RELAXATION; ELECTROCHEMICAL ELECTRODES; MICROSTRUCTURE; SINTERING;

PERMITTIVITY;

EID: 79953675066     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2010.04197.x     Document Type: Article

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