Preparation and characterization of GeTe4 thin films as a candidate for phase change memory applications

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Jiang, Hao ^a   Guo, Kang ^a   Xu, Hanni ^a   Xia, Yidong ^a   Jiang, Kun ^a   Tang, Fei ^a   Yin, Jiang ^a   Liu, Zhiguo ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSON TRANSITION; CRYSTALLIZATION TEMPERATURE; ELECTRIC CONDUCTION; KISSINGER; MELTING TEMPERATURES; PHASE CHANGE; PULSED-LASER DEPOSITION TECHNIQUE; RESISTANCE RATIO;

ACTIVATION ENERGY; GERMANIUM; POLYMER BLENDS; PULSED LASER DEPOSITION;

PHASE CHANGE MEMORY;

EID: 79953663116     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561369     Document Type: Article

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