Direct patterning and electrospray deposition through EHD for fabrication of printed thin film transistors

Current Applied Physics

Volumn 11, Issue 1 SUPPL., 2011, Pages

  Khan, Saleem ^a   Doh, Yang Hoi ^a   Khan, Arshad ^a   Rahman, Ahsan ^a   Choi, Kyung Hyun ^a   Kim, Dong Soo ^b  

^a Jeju National University   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

Author keywords

Electrohydrodynamic printing (EHDP); Elelctrospray deposition (ESD); Metallic enclosed glass (MEG); Vertically inserted electrode (VIE)

Indexed keywords

AG NANOPARTICLE; AMBIENT CONDITIONS; CHANNEL LENGTH; COLLOIDAL SOLUTIONS; CONDUCTIVE LINES; CONDUCTIVE PATTERNS; DEPOSITED LAYER; DIRECT PRINTING; DIRECT-PATTERNING; DIRECT-WRITE TECHNOLOGY; ELECTRODE CONFIGURATIONS; ELECTROSPRAY DEPOSITION; ELELCTROSPRAY DEPOSITION (ESD); EXTRACTION VOLTAGE; FABRICATION OF THIN FILMS; FIXED PARAMETERS; GLASS CAPILLARIES; GLASS SUBSTRATES; INKJET HEAD; LAYER THICKNESS; METALLIC ENCLOSED GLASS (MEG); NOZZLE HEADS; PRINTING TECHNOLOGIES; SEMICONDUCTOR LAYERS; SOURCE AND DRAINS; SPRAY DEPOSITION; SPREADING COEFFICIENTS; STANDARD DEVIATION; THIN ELECTRODE; VERTICALLY INSERTED ELECTRODE (VIE); WETTING ENERGY; ZNO;

ASPECT RATIO; CONTACT ANGLE; DEPOSITION; ELECTROHYDRODYNAMICS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; EXPERIMENTS; FABRICATION; GLASS; NOZZLES; PRINTING; SILICON COMPOUNDS; SILVER; SUBSTRATES; SURFACE PROPERTIES; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

VAPOR DEPOSITION;

EID: 79953187558     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.11.044     Document Type: Conference Paper

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