Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor

Current Applied Physics

Volumn 9, Issue 2, 2009, Pages 551-555

  Rha, Sa Kyun ^a   Chou, Tammy P ^b   Cao, Guozhong ^b   Lee, Youn Seoung ^a   Lee, Won Jun ^c  

^a Hanbat National University   (South Korea)

^b UNIVERSITY OF WASHINGTON   (United States)

^c Sejong University   (South Korea)

Author keywords

Electrophoretic deposition; Flexible display; Silica (SiO2); Sol gel; Tetraethylorthosilicate (TEOS)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COLLOIDS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTROPHORESIS; FILM GROWTH; GELATION; HYDROPHILICITY; IONIZATION OF GASES; OXIDE FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; SILICON COMPOUNDS; SOLS; SURFACE MORPHOLOGY; THICK FILMS;

BREAKDOWN VOLTAGES; DEPOSITION TIMES; DIPPING CONDITIONS; ELECTROPHORETIC DEPOSITION; ELECTROPHORETIC DEPOSITION METHODS; ELECTROPHORETIC DEPOSITIONS; FLEXIBLE DISPLAY; HYDROPHILIC; HYDROPHOBIC; LOW TEMPERATURES; SI SURFACES; SILICON DIOXIDE FILMS; SILICON OXIDE THIN FILMS; SOL-GEL; TETRAETHYLORTHOSILICATE; TETRAETHYLORTHOSILICATE (TEOS); WET ETCH RATES;

FILM PREPARATION;

EID: 55049138905     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.03.023     Document Type: Article

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