Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses

Applied Physics A: Materials Science and Processing

Volumn 103, Issue 1, 2011, Pages 43-50

  Rublack, T ^a   Hartnauer, S ^a   Kappe, P ^b   Swiatkowski, C ^b   Seifert, G ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b Q Cells SE ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LAYER; LASER FLUENCES; LASER PULSE DURATION; MONOTONIC DECREASE; PHYSICAL MECHANISM; PICOSECOND LASER PULSE; PULSE DURATIONS; SHORT LASER PULSE; SI SURFACES; SILICON SUBSTRATES; THRESHOLD FLUENCES;

ABLATION; LASER PULSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; ULTRAFAST LASERS;

SILICON WAFERS;

EID: 79953023929     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6352-x     Document Type: Article

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