The evolution and analysis of electrical percolation threshold in nanometer scale thin films deposited by electroless plating

Materials Chemistry and Physics

Volumn 127, Issue 1-2, 2011, Pages 214-219

  Sabayev, V ^a   Croitoru, N ^a   Inberg, A ^a   Shacham Diamand, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

Electrical properties; Electrochemical techniques; Thin film; ULSI

Indexed keywords

CRITICAL EXPONENT; CU FILMS; CU THIN FILM; DIELECTRIC GAPS; ELECTRICAL CONTACTS; ELECTRICAL PERCOLATION THRESHOLD; ELECTRICAL PROPERTY; ELECTROCHEMICAL TECHNIQUES; ELECTROLESS DEPOSITION; FILM ROUGHNESS; GAP SIZE; GROWTH MODES; INSULATOR-CONDUCTOR TRANSITION; INTERCONNECT METALLIZATION; LOW RESISTIVITY; METAL ION CONCENTRATION; NANO-METER SCALE; OXIDATION STATE; PERCOLATION THRESHOLDS; POWER LAW; RESISTIVITY CHANGES; SATURATION VALUES; ULSI; ULTRA-THIN; ULTRALARGE SCALE INTEGRATION;

COPPER; ELECTRIC PROPERTIES; ELECTROCHEMICAL PROPERTIES; ELECTROCHEMISTRY; ELECTROLESS PLATING; FILM GROWTH; METAL ANALYSIS; METAL IONS; PERCOLATION (COMPUTER STORAGE); PERCOLATION (FLUIDS); PERCOLATION (SOLID STATE); SOLVENTS; SURFACE ROUGHNESS; THIN FILMS; ULSI CIRCUITS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

SILVER;

EID: 79952985424     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.01.061     Document Type: Article

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