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Volumn 318, Issue 1, 2011, Pages 788-790

Response-time-improved ZnO scintillator by impurity doping

(10) Kano, Masataka a Wakamiya, Akira a Sakai, Kohei b Yamanoi, Kohei b Cadatal Raduban, Marilou b Nakazato, Tomoharu b Shimizu, Toshihiko b Sarukura, Nobuhiko b Ehrentraut, Dirk c Fukuda, Tsuguo c

a Daishinku Corp (Japan)

b OSAKA UNIVERSITY (Japan)

c TOHOKU UNIVERSITY (Japan)

Author keywords

A1. Doping; A2. Hydrothermal crystal growth; B1. Oxides; B1. Zinc compounds; B3. Scintillators

Indexed keywords

A1. DOPING; A2. HYDROTHERMAL CRYSTAL GROWTH; B1. OXIDES; B1. ZINC COMPOUNDS; B3. SCINTILLATORS;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; DOPING (ADDITIVES); FREE ELECTRON LASERS; IONIZATION; LASERS; PHOSPHORS; SCINTILLATION COUNTERS; TRANSITION METAL COMPOUNDS; ULTRAFAST LASERS; ULTRAFAST PHENOMENA; ZINC; ZINC OXIDE;

SCINTILLATION;

EID: 79952739044 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.192 Document Type: Conference Paper

Times cited : (35)

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