Hydrothermal-method-grown ZnO single crystal as fast EUV scintillator for future lithography

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 875-877

  Nakazato, Tomoharu ^a   Furukawa, Yusuke ^a   Tanaka, Momoko ^b   Tatsumi, Toshihiro ^a   Nishikino, Masaharu ^b   Yamatani, Hiroshi ^b   Nagashima, Keisuke ^b   Kimura, Toyoaki ^b   Murakami, Hidetoshi ^a   Saito, Shigeki ^a   Shimizu, Toshihiko ^a   Sarukura, Nobuhiko ^a   Nishimura, Hiroaki ^a   Mima, Kunioki ^a   Kagamitani, Yuji ^c   Ehrentraut, Dirk ^c   Fukuda, Tsuguo ^c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A2. Hydrothermal crystal growth; B1. Oxides; B2. Scintillator materials

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; GROWTH (MATERIALS); LIGHT EMISSION; NICKEL OXIDE; SCINTILLATION; SCINTILLATION COUNTERS; SEMICONDUCTING ZINC COMPOUNDS; SILVER; SINGLE CRYSTALS; ULTRAVIOLET DEVICES; ZINC; ZINC OXIDE;

A2. HYDROTHERMAL CRYSTAL GROWTH; B1. OXIDES; B2. SCINTILLATOR MATERIALS; BLUE-SHIFTED; CRYSTAL TEMPERATURES; DECAY TIME; EMISSION DECAYS; EXPONENTIAL DECAYS; EXTREME ULTRA VIOLETS; FULL WIDTH AT HALF-MAXIMUM; LASER EMITTING; LASER PLASMAS; NANOSECOND DURATIONS; PEAK POSITIONS; ROOM TEMPERATURES; SCINTILLATION PROPERTIES; TEMPERATURE DEPENDENCES; ZNO; ZNO SINGLE CRYSTALS;

LUMINESCENCE;

EID: 59749104872     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.106     Document Type: Article

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