Bi catalyzed VLS growth of PbTe (0 0 1) nanowires

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 1105-1108

  Volobuev, V V ^a   Stetsenko, A N ^a   Mateychenko, P V ^b   Zubarev, E N ^a   Samburskaya, T ^a   Dziawa, P ^c   Reszka, A ^c   Story, T ^c   Sipatov, A Yu ^a  

^a NATIONAL TECHNICAL UNIVERSITY   (Ukraine)

^b INSTITUTE FOR SINGLE CRYSTALS   (Ukraine)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

A1. Nanostructures; A1. Nanowires; A3. Molecular beam epitaxy; A3. Vaporliquidsolid growth; B2. Semiconducting lead compounds

Indexed keywords

A1. NANOSTRUCTURES; A1. NANOWIRES; A3. MOLECULAR BEAM EPITAXY; A3. VAPORLIQUIDSOLID GROWTH; B2. SEMICONDUCTING LEAD COMPOUNDS;

CATALYSTS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR GROWTH; SODIUM CHLORIDE; THERMAL EVAPORATION; VACUUM EVAPORATION; X RAY DIFFRACTION;

NANOWIRES;

EID: 79952737530     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.143     Document Type: Conference Paper

References (19)

1. M. Dresselhaus, Y. Lin, O. Rabin, M. Black, J. Kong, and G. Dresselhaus Nanowires B. Bhusan, Springer Handbook of Nanotechnology 2010 Springer Berlin 119 167
2. L. Hicks, and M. Dresselhaus Thermoelectric figure of merit of a one-dimensional conductor Physical Review B 47 1993 16631 16634
3. Y. Lin, and M. Dresselhaus Thermoelectric properties of superlattice nanowires Physical Review B 68 2003 75304
4. P. McCann IVVI semiconductors for mid-infrared optoelectronic devices A. Krier, Mid-infrared Semiconductor Optoelectronics 2006 Springer Berlin 237 264 (Pubitemid 44856968)
5. G. Springholz, T. Schwarzl, and W. Heiss Mid-infrared vertical cavity surface emitting lasers based on the lead salt compounds A. Krier, Mid-infrared Semiconductor Optoelectronics 2006 Springer Berlin 265 301 (Pubitemid 44856969)
6. A. Nozik Multiple exciton generation in semiconductor quantum dots Chemical Physics Letters 457 2008 3 11
7. M. Kelzenberg, S. Boettcher, J. Petykiewicz, D. Turner-Evans, M. Putnam, E. Warren, J. Spurgeon, R. Briggs, N. Lewis, and H. Atwater Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications Nature Materials 9 2010 239 244
8. R. Wagner, and W. Ellis Vapor Liquid Solid Mechanism of Single Crystal Growth Applied Physics Letters 4 1964 89 90
9. W. Bullis Properties of gold in silicon Solid-State Electronics 9 1966 143 168
10. R. OShea, J. Donovan, and E. Peretti The quasibinary system PbTeBi Transactions of the Metallurgical Society of AIME 221 1961 1266 1267
11. N. Abrikosov, E. Skudnova, L. Poretskaya, and T. Osipova Investigation of the system of BiPbTe Inorganic Material 5 1969 630 633
12. G. Springholz Molecular beam epitaxy of IVVI heterostructures and superlattices D. Khokhlov, Lead Chalcogenides: Physics and Applications 2003 Taylor & Francis New York 123 207
13. J. Zhu, H. Peng, C. Chan, K. Jarausch, X. Zhang, and Y. Cui Hyperbranched lead selenide nanowire networks Nano Letters 7 2007 1095 1099 (Pubitemid 46717767)
14. P. Dziawa, J. Sadowski, P. Dluzewski, E. Lusakowska, V. Domukhovski, B. Taliashvili, T. Wojciechowski, L. Baczewski, M. Bukala, M. Galicka, R. Buczko, P. Kacman, and T. Story Defect free PbTe nanowires grown by molecular beam epitaxy on GaAs (1 1 1) B substrates Crystal Growth Design 10 2010 109 113
15. R. Egerton Surface free energies of lead telluride Surface Science 24 1971 647 650
16. R. Blachnik, and P. Wallbrecht Comments on: surface free energies of lead telluride by RF Egerton Surface Science 33 1972 209 210
17. M. Bukala, M. Galicka, R. Buczko, and P. Kacman Stability of IIIV and IVVI nanowires - a theoretical study Physica E: Low-dimensional Systems and Nanostructures 42 2009 795 798
18. E. Givargizov Fundamental aspects of VLS growth Journal of Crystal Growth 31 1975 20 30
19. D. Kim, U.G. Sele, and M. Zacharias Surface-diffusion induced growth of ZnO nanowires Journal of Crystal Growth 311 2009 3216 3219