D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface

Journal of Physics Condensed Matter

Volumn 23, Issue 11, 2011, Pages

  Hao, Y L ^a   Djotyan, A P ^b   Avetisyan, A A ^a,b   Peeters, F M ^b,c  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b YEREVAN STATE UNIVERSITY   (Armenia)

^c FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE BOHR RADIUS; EFFECTIVE MASS APPROXIMATION; ELECTRON WAVE FUNCTIONS; GROUND-STATE ENERGIES; IMAGE CHARGES; SEMICONDUCTOR METALS; SEMICONDUCTOR-DIELECTRIC INTERFACE; SEMICONDUCTOR-METAL INTERFACES; SHALLOW DONORS;

NUCLEAR ENERGY; POTENTIAL ENERGY;

BINDING ENERGY;

EID: 79952677089     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/11/115303     Document Type: Article

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