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Volumn 98, Issue 10, 2011, Pages

Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn) 3 O4 oxide semiconductor and their electrical transport properties

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL RESISTANCE; ELECTRIC-FIELD CONTROL; ELECTRICAL TRANSPORT PROPERTIES; FERROELECTRIC FIELD EFFECT TRANSISTORS; FIELD EFFECT TRANSISTOR STRUCTURES; HETEROSTRUCTURES; HIGH CURIE TEMPERATURE; OXIDE SEMICONDUCTOR; PB(ZR , TI)O; ROOM TEMPERATURE;

EID: 79952649552     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3564885     Document Type: Article
Times cited : (9)

References (13)
  • 1
    • 0042916408 scopus 로고    scopus 로고
    • Electric field effect in correlated oxide systems
    • DOI 10.1038/nature01878
    • C. H. Ahn, J. M. Triscone, and J. Mannhart, Nature (London) 0028-0836 424, 1015 (2003). 10.1038/nature01878 (Pubitemid 37069244)
    • (2003) Nature , vol.424 , Issue.6952 , pp. 1015-1018
    • Ahn, C.H.1    Triscone, J.-M.2    Mannhart, J.3
  • 4
    • 33845746291 scopus 로고    scopus 로고
    • 3 field-effect transistor
    • DOI 10.1063/1.2405861
    • T. Kanki, H. Tanaka, and T. Kawai, Appl. Phys. Lett. 0003-6951 89, 242506 (2006). 10.1063/1.2405861 (Pubitemid 44974942)
    • (2006) Applied Physics Letters , vol.89 , Issue.24 , pp. 242506
    • Kanki, T.1    Tanaka, H.2    Kawai, T.3
  • 12
    • 25844470206 scopus 로고
    • 0031-899X, 10.1103/PhysRev.181.946
    • A. Rosencwaig, Phys. Rev. 0031-899X 181, 946 (1969). 10.1103/PhysRev.181. 946
    • (1969) Phys. Rev. , vol.181 , pp. 946
    • Rosencwaig, A.1
  • 13
    • 1542512773 scopus 로고    scopus 로고
    • 0556-2805, 10.1103/PhysRevB.66.132403
    • J. Loos and P. Novák, Phys. Rev. B 0556-2805 66, 132403 (2002). 10.1103/PhysRevB.66.132403
    • (2002) Phys. Rev. B , vol.66 , pp. 132403
    • Loos, J.1    Novák, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.