Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Semiconductor Science and Technology

Volumn 25, Issue 5, 2010, Pages

  Rougieux, F E ^a   MacDonald, D ^a   McIntosh, K R ^a   Cuevas, A ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CRYSTALLINE SILICONS; DOPANT SEGREGATION; EXPERIMENTAL EVIDENCE; HOT PROBE; INVERSION LAYER; METAL OXIDE SEMICONDUCTOR STRUCTURES; P-N JUNCTION; P-TYPE; P-TYPE SILICON WAFERS; THERMAL OXIDATION;

DOPING (ADDITIVES); OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE SEGREGATION;

SEMICONDUCTOR JUNCTIONS;

EID: 77951234089     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055009     Document Type: Article

References (7)

1. Grove A S, Sah C T and Leistiko O 1964 Redistribution of acceptor + donor impurities during thermal oxidation of silicon J. Appl. Phys. 35 2695
2. Macdonald D, Cuevas A and Geerligs L J 2008 Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing Appl. Phys. Lett. 92 202119 (Pubitemid 351733901)
3. Silvaco 2004 Silvaco-ATHENA Users Manual (USA: Silvaco International)
4. Silvaco 1998 Silvaco-ATLAS Users Manual (USA: Silvaco International)
5. Nicollian E H and Goetzberger A 1965 Lateral ac current flow model for metal-insulator-semiconductor capacitors IEEE Trans. Electron Devices 12 108-17
6. Sigmon T W and Swanson R 1973 MOS threshold shifting by ion implantation Solid-State Electron. 16 1217-32
7. Schroder 2006 Semiconductor Material and Device Characterisation (New York: Wiley-Interscience)