Evolution of thermal donors in silicon enhanced by self-lnterstitials

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 387-392

  Voronkov, V V ^a   Voronkova, G I ^b   Batunina, A V ^b   Falster, R ^c   Golovina, V N ^b   Guliaeva, A S ^b   Tiurina, N B ^b   Milvidski, M G ^b  

^a MEMC Electronic Materials   (Italy)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c MEMC Electronic Materials   (Italy)

Author keywords

Oxygen; Self interstitials; Silicon; Thermal donors

Indexed keywords

BAND STRUCTURE; KINETIC PARAMETERS; QUENCHING; RAPID THERMAL ANNEALING; SURFACE DEFECTS; OXYGEN; SILICON;

KINETIC CURVES; MICRODEFECTS; SELF-INTERSTITIALS; THERMAL DONOR (TD); THERMAL DONORS; GROWN-IN MICRODEFECTS; MICRO-DEFECTS; OXYGEN TRANSPORT; SELF INTERSTITIALS; SLOWLY COOLED; THERMAL DONOR; TIME DEPENDENCE;

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 38549182359     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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