A novel atomic layer deposition process to deposit hafnium silicate thin films

Proceedings - Electrochemical Society

Volumn 1, Issue , 2004, Pages 264-270

  Senzaki, Yoshihide ^a   Park, Seung ^a   Bartholomew, Lawrence ^a   Chatham, Hood ^a  

^a Aviza Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SILICA; SILICON; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ATOMIC LAYER DEPOSITION (ALD); DEPOSITION CYCLES; OXIDIZER;

THIN FILMS;

EID: 5744251110     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. G.D. Wilk, R. M. Wallace, J. M. Anthony, J. Appl. Phys, 89, (2001) 5243.
2. Y. Senzaki, A. K. Hochberg, J. A. T. Norman, Adv. Mater. Opt. Electron., 10, (2000) 93 and references cited therein.
3. Y. Senzaki, S. G. Park, R. Higuchi, L. Bartholomew, H. Chatham, S. Al-Lami, C. Barelli, S.-I. Lee, A. Helms, Jr., in Advanced Short-Time Thermal Processing for Si-Based CMOS Devices/2003, F. Roozeboom, E. Gusev, L.-J. Chen, M. C. Ozturk, D.-L. Kwong, and P. J. Timans, Editors, PV 2003-14, p. 423, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).
4. Y. Senzaki, H. Chatham, R. Higuchi, C. Bercaw, J. DeDontney, in Physics and Technology oh High-K Gate Dielectrics-II, S. Kar, R. Singh, D. Misra, H. Iwai, M. Houssa, J. Morals, D. Landheer, Editors, PV2003-XX, p. 259, The Electrochemical Society Proceedings Series, Pennington, NJ (2004).