Low-temperature CVD of silicon dioxide by alkoxyl-silane-isocyanate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1460-1463

  Uchida, Yasutaka ^a   Takei, Shu ^a   Matsumura, Masakiyo ^b  

^a Nishi Tokyo University   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AES; CVD; Cyanate; FTIR; Silicon compounds; SiO2; XPS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LOW TEMPERATURE OPERATIONS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

ALKOXY SILANE ISOCYANATE; ETHOXY SILANE ISOCYANATE;

SEMICONDUCTING FILMS;

EID: 0030078874     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1460     Document Type: Article

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