The deposition of Ru and RuO2 films for DRAM electrode

ECS Transactions

Volumn 33, Issue 2, 2010, Pages 135-144

  Schaekers, M ^a   Capon, B ^b   Detavernier, C ^b   Blasco, N ^c  

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DECOMPOSITION; HYDROGEN; RUTHENIUM COMPOUNDS;

DEPOSITED FILMS; HYDROGEN PRESSURES; PROCESS TEMPERATURE; RU FILM;

RUTHENIUM;

EID: 79952542126     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3485250     Document Type: Conference Paper

References (5)

1. S.-S. Yim, D.-J. lee, K.-S. Kim, S.-H. Kim, T.-S. Yoon and K.-B. Kim, J. Appl. Phys., 103, 113509 (2008).
2. J. Sankar, T.K. Sham and R.J. Puddephatt, J. Mater. Chem., 9, 2439 (1999).
3. J. Gatineau, K. Yanagita, C. Dussarrat, Microelect. Eng, 83, 2248 (2006).
4. J.H. Han, S.W. Lee, G.-J. Choi, S.Y. Lee, C.S. Hwang, C. Dussarrat and J. Gatineau, Chem. Mater. 21, 207 2009)
5. C. Zhao, M.A. Pawlak, M. Popovici, M. Schaekers, E. Sleeckx, E. Vancoille, D.J. Wouters, Zs. Tokei and J.A. Kittl, ECS Trans. 25, 377 (2009)