Nanoscale semiconductor Pb 1-x Sn x Se (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

Applied Surface Science

Volumn 257, Issue 13, 2011, Pages 5803-5807

  Lin, Shaoxiong ^a   Zhang, Xin ^a   Shi, Xuezhao ^a   Wei, Jinping ^a   Lu, Daban ^a   Zhang, Yuzhen ^a   Kou, Huanhuan ^a   Wang, Chunming ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

EC ALD; Gold substrate; Photoelectric switch; UPD

Indexed keywords

ATOMIC LAYER DEPOSITION; CYCLIC VOLTAMMETRY; DEPOSITS; ELECTROCHEMICAL DEPOSITION; ENAMELS; FIELD EMISSION MICROSCOPES; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; PHOTOELECTRICITY; SCANNING ELECTRON MICROSCOPY; SELENIUM COMPOUNDS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR ALLOYS; SUBSTRATES; THIN FILMS; TIN COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE STRUCTURE; EC-ALD; FABRICATION AND CHARACTERIZATIONS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GOLD SUBSTRATES; NANOSCALE SEMICONDUCTORS; OPEN CIRCUIT POTENTIAL; PHOTOELECTRIC SWITCHES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 79952536758     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.01.108     Document Type: Article

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