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Volumn 131, Issue 5, 2011, Pages 834-837
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Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer
a
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Author keywords
Luminescence; SiO2 buffer layer; Thermal retardation; Thin films; ZnO
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Indexed keywords
AFM;
AFM IMAGE;
AMBIENT AIR;
E BEAM EVAPORATION;
OPTICAL QUALITIES;
PL MEASUREMENTS;
PREFERRED ORIENTATIONS;
RMS ROUGHNESS;
SI SUBSTRATES;
SIO2 BUFFER LAYER;
STRUCTURAL AND OPTICAL PROPERTIES;
TEMPERATURE RANGE;
THERMAL RETARDATION;
UV LUMINESCENCE;
UV PHOTOLUMINESCENCE;
XRD ANALYSIS;
ZNO;
ZNO FILMS;
ZNO THIN FILM;
AMORPHOUS FILMS;
ATOMIC FORCE MICROSCOPY;
BUFFER LAYERS;
CRYSTAL ATOMIC STRUCTURE;
METALLIC FILMS;
OPTICAL FILMS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SUBSTRATES;
THERMAL EVAPORATION;
THIN FILMS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
ZINC OXIDE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79952487121
PISSN: 00222313
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jlumin.2011.01.008 Document Type: Review |
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Times cited : (13)
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References (11)
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