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Volumn 98, Issue 9, 2011, Pages

Effect of nanoscale surface roughness on transverse energy spread from GaAs photocathodes

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GAAS PHOTOCATHODES; HIGH BRIGHTNESS; INCIDENT LIGHT; NANO-SCALE SURFACE ROUGHNESS; NEGATIVE ELECTRON AFFINITY; ORDER OF MAGNITUDE; PHOTOINJECTORS; RESPONSE TIME; TRANSVERSE ENERGY;

EID: 79952410814     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3559895     Document Type: Article
Times cited : (57)

References (16)
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    • J. Escher, Semicond. Semimetals 0080-8784 15, 195 (1981). 10.1016/S0080-8784(08)60286-0
    • (1981) Semicond. Semimetals , vol.15 , pp. 195
    • Escher, J.1
  • 11
    • 34548685231 scopus 로고    scopus 로고
    • High-precision calculation of quasistatic field near a photocathode surface microrelief
    • DOI 10.1016/j.elstat.2007.05.010, PII S030438860700068X
    • T. Gorlov, J. Electrost. 0304-3886 65, 735 (2007). 10.1016/j.elstat.2007. 05.010 (Pubitemid 47412993)
    • (2007) Journal of Electrostatics , vol.65 , Issue.12 , pp. 735-741
    • Gorlov, T.1
  • 12
    • 0020193772 scopus 로고
    • 0021-8979, 10.1063/1.331665
    • J. S. Blakemore, J. Appl. Phys. 0021-8979 53, R123 (1982). 10.1063/1.331665
    • (1982) J. Appl. Phys. , vol.53 , pp. 123
    • Blakemore, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.