Narrow cone emission from negative electron affinity photocathodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2758-2762

  Liu, Zhi ^a   Sun, Yun ^a   Pianetta, P ^a   Pease, R F W ^a  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONE EMISSION; EFFECTIVE MASS; NEGATIVE ELECTRON AFFINITY (NEA); SEMICONDUCTOR STRUCTURES;

CONES; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRONS; LIGHT SCATTERING; MATHEMATICAL MODELS; NITRIDES; PHOTOCATHODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES;

LIGHT EMISSION;

EID: 29044438614     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2101726     Document Type: Article

References (13)

1. R. Eden, J. Moll, and W. Spicer, Phys. Rev. Lett. 18, 597 (1967).
2. L. James and J. Moll, Phys. Rev. 183, 740 (1969).
3. H. J. Drouhin, C. Hermann, and G. Lampel, Phys. Rev. B 31, 3859 (1985).
4. A. Terekov and D. Orlov, JETP Lett. 59, 864 (1994).
5. D. Orlov, Appl. Phys. Lett. 78, 2721 (2001).
6. V. Bermudez, J. Appl. Phys. 80, 1190 (1996).
7. M. Benjamin, Appl. Phys. Lett. 64, 3288 (1994).
8. M. Eyckeler, J. Vac. Sci. Technol. B 16, 2224 (1998).
9. Z. Liu, Appl. Phys. Lett. 85, 1541 (2004).
10. Z. Liu and Y. Sun, J. Vac. Sci. Technol. B 21, 1953 (2003).
11. J. H. Pollard, in Proceedings of the 2nd European Electro-Optics Makets and Technology Conference (1974), p. 316.
12. C. A. Sanford and N. C. MacDonald, J. Vac. Sci. Technol. B 6, 1863 (1990).
13. R. S. L. Levinshtein and M. E. Shur, Properties of Advanced Semi-Conductor Materials: GaN, AIN, InN, BN, SiC, SiGe (Wiley, New York, 2001).