Growth of vertically aligned carbon nanotubes by DCPECVD system and the effects of C2H2 concentration and plasma current on the growth behavior of CNTS

Arabian Journal for Science and Engineering

Volumn 36, Issue 1, 2011, Pages 97-103

  Ahmadzade, F ^a   Safa, S ^a   Balashabady, P ^a  

^a AGRICULTURAL MEDICAL AND INDUSTRIAL RESEARCH SCHOOL   (Iran)

Author keywords

Carbon nanotubes; MOSFET; PECVD; Vertical aligned growth

Indexed keywords

EID: 79952372900     PISSN: 2193567X     EISSN: 21914281     Source Type: Journal    
DOI: 10.1007/s13369-010-0001-0     Document Type: Article

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