Optical and morphological properties of N-doped TiO2 thin films

Surface Science

Volumn 605, Issue 7-8, 2011, Pages 775-782

  Grigorov, K G ^a,b   Oliveira, I C ^a   MacIel, H S ^a   Massi, M ^a   Oliveira Jr , M S ^a   Amorim, J ^c   Cunha, C A ^a  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b INSTITUTE OF ELECTRONICS   (Bulgaria)

^c BRAZILIAN CENTER FOR RESEARCH IN ENERGY AND MATERIALS CNPEM   (Brazil)

Author keywords

Band gap width; N doped TiO2 thin films; Optical transmittance; Reactive gas sputtering; Titanium oxynitride; Wettability

Indexed keywords

BAND GAP WIDTH; N-DOPED TIO; OPTICAL TRANSMITTANCE; REACTIVE GAS; TITANIUM OXYNITRIDE; WETTABILITY;

ANGLE MEASUREMENT; ARGON; ATOMIC FORCE MICROSCOPY; CONTACT ANGLE; ENERGY GAP; INTERFACIAL ENERGY; MAGNETRON SPUTTERING; MORPHOLOGY; NITROGEN; NITROGEN PLASMA; OPACITY; OXIDE MINERALS; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE CHEMISTRY; SURFACE MORPHOLOGY; THIN FILMS; TITANIUM; TITANIUM DIOXIDE; TITANIUM NITRIDE;

OPTICAL FILMS;

EID: 79952361013     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.01.017     Document Type: Article

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