Influence of the intermediate density-of-states occupancy on open-circuit voltage of bulk heterojunction solar cells with different fullerene acceptors

Journal of Physical Chemistry Letters

Volumn 1, Issue 17, 2010, Pages 2566-2571

  Garcia Belmonte, Germà ^a   Boix, Pablo P ^a   Bisquert, Juan ^a   Lenes, Martijn ^b   Bolink, Henk J ^b   La Rosa, Andrea ^c,d   Filippone, Salvatore ^c,d   Martín, Nazario ^c,d  

^a UNIVERSITAT JAUME I   (Spain)

^b UNIVERSITY OF VALENCIA   (Spain)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^d INSTITUTO MADRILEÑO DE ESTUDIOS AVANZADOS EN NANOCIENCIA IMDEA NANOCIENCIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

[60] FULLERENE; BULK HETEROJUNCTION SOLAR CELLS; BUTYRIC ACIDS; ELECTRON DENSITY OF STATE; ELECTRONIC BAND; IMPEDANCE SPECTROSCOPY; INTERMEDIATE DENSITIES; METHYL ESTERS; NEGATIVE EXPONENTIAL; POLY-3-HEXYLTHIOPHENE; RECOMBINATION KINETICS; SUN ILLUMINATION;

CARRIER LIFETIME; ESTERS; FATTY ACIDS; FULLERENES; OPEN CIRCUIT VOLTAGE; SOLAR CELLS;

HETEROJUNCTIONS;

EID: 77956333686     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz100956d     Document Type: Article

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