SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 257, Issue 12, 2011, Pages 5358-5361

Pulsed laser ablation of GaAs using nano pulse length

(6) Dubcek P a Pivac, B a Milosevic S b Krstulovic N b Kregar, Z b Bernstorff, S c

a RUDER BO KOVI INSTITUTE (Croatia)

b INSTITUTE OF PHYSICS (Croatia)

c SINCROTRONE TRIESTE (Italy)

Author keywords

Atomic force microscopy; GaAs; Grazing angle small angle X ray scattering; Pulsed laser deposition

Indexed keywords

ABLATION; ATOMIC FORCE MICROSCOPY; FILMS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LASER ABLATION; LASER PULSES; NANOPARTICLES; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; X RAY SCATTERING;

COMPOUND STRUCTURES; GAAS; GAAS NANOPARTICLES; GRAZING ANGLES; GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING; INERT ATMOSPHERES; NANOSECOND LASER PULSE; OPTIMAL CONDITIONS;

PULSED LASERS;

EID: 79952317783 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.12.028 Document Type: Conference Paper

Times cited : (12)

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