Growth of mixed phased films of γ-Fe2O3 and half metallic Fe3O4 using (100) MgO/Fe under layer for spin electronic devices

Journal of Physics: Conference Series

Volumn 266, Issue 1, 2011, Pages

  Wang, M L ^a,b   Yu, R H ^b   Nakagawa, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM PREPARATION; MAGNESIA; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETISM; MAGNETITE; PARTIAL PRESSURE; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY AND MAGNETIC PROPERTIES; DISCHARGE CURRENTS; FACING TARGETS SPUTTERING; OXYGEN PARTIAL PRESSURE; PREFERENTIAL ORIENTATION; SPIN-ELECTRONIC DEVICES; SUBSTRATE HEATING; SUBSTRATE TEMPERATURE;

SUBSTRATES;

EID: 79952025250     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/266/1/012111     Document Type: Conference Paper

References (7)

1. Jain S, Dai D Y and Adeyeye A O 2004 J. Appl. Phys. 95 7237
2. Jain S, Boothroyd, C B and Adeyeye, A O 2005 J. Appl. Phys. 97 093713-1
3. Sakuma H, Sato S, Gomimoto R, Hiyama S and Ishii K 2007 IEEJ. Trans. 2 431-35
4. Yuasa S, Nagahama T, Fukushima A, Suzuki Y and Ando K 2004 Nature Materials. 3 868
5. Fert A R et al 2001 Eur. Phys. J. B 24 43-49
6. Pan L P, Zhang G M, Fan CF, Qiu H, Wu P, Wang F P and Zhang Y 2004 The Solid Films 473 63-69
7. Sakuma H, Ishii K 2009 J. Magn. Magn. Mater. 321 872-75