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Electrochemical and Solid-State Letters

Volumn 14, Issue 4, 2011, Pages

Memory charging effect in silicon nanoparticles of pentacene capacitor device

(5) Kim, Yo Han a Jung, Sung Mok a Yoon, Tae Sik a Kim, Yong Sang a Lee, Hyun Ho a

a Myong Ji University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; CHARGE RETENTION TIME; CHARGE STORAGE; CHARGING EFFECT; CHEMICAL OXIDATION; ELECTRICAL PERFORMANCE MEASUREMENT; ETCHING METHOD; FLAT-BAND VOLTAGE SHIFT; ORGANIC MEMORIES; PENTACENES; SELF-ASSEMBLED; SILICON NANOPARTICLES; SILICON POWDERS; VOLTAGE SWEEP;

CAPACITORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYSTERESIS; HYSTERESIS LOOPS; NANOPARTICLES; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES;

SILICON;

EID: 79951906198 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3544488 Document Type: Article

Times cited : (5)

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