Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 485-488

  Schuurmans, F M ^a   Schonecker, A ^a   Eikelboom, J A ^a   Sinke, W C ^a  

^a TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CLEANING; CRYSTAL ORIENTATION; ETCHING; HYDROGEN INORGANIC COMPOUNDS; OXIDATION; OXIDES; PASSIVATION; SILICON NITRIDE; SURFACES; VELOCITY;

CRYSTAL ORIENTATION DEPENDENCE; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SILICON NITRIDE PASSIVATED SILICON WAFERS; SURFACE RECOMBINATION VELOCITY; THERMAL OXIDES;

SILICON WAFERS;

EID: 0030380311     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.564049     Document Type: Conference Paper

References (15)