Conformal P-N junctions in macroporous silicon for photovoltaic energy conversion

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 7, 2009, Pages 1754-1758

  Clarkson, Jeffrey P ^a   See, Gloria G ^b   Veeramachaneni, Bharat ^c   Gadeken, Larry L ^d   Hirschman, Karl D ^c   Fauchet, Philippe M ^a,b  

^a UNIVERSITY OF ROCHESTER   (United States)

^b University of Rochester   (United States)

^c Rochester Institute of Technology   (United States)

^d BetaBatt Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-CENTER; DEVICE PERFORMANCE; DEVICE STRUCTURES; DOPANT DIFFUSION; HOST MATRICES; INTERNAL SURFACE AREA; LARGE SURFACE AREA; LIGHT-TRAPPING; MACRO POROUS SILICON; P-N DIODE; P-N JUNCTION; P-TYPE; PHOTOACTIVE COMPOUNDS; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC ENERGY CONVERSION; PHOTOVOLTAIC MODES; PHOTOVOLTAICS; PORE SPACING; RAPID THERMAL DIFFUSION; SI SUBSTRATES;

ANTIREFLECTION COATINGS; DIODES; DOPING (ADDITIVES); ENERGY CONVERSION; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THREE DIMENSIONAL;

POROUS SILICON;

EID: 70949096983     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881119     Document Type: Conference Paper

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