Characterization of power-to-phase conversion in high-speed P-I-N photodiodes

IEEE Photonics Journal

Volumn 3, Issue 1, 2011, Pages 140-151

  Taylor, J ^a,b   Datta, S ^c   Hati, A ^a   Nelson, C ^a   Quinlan, F ^a   Joshi, A ^c   Diddams, S ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF COLORADO   (United States)

^c DISCOVERY SEMICONDUCTORS INC   (United States)

Author keywords

Frequency combs; microwave photonics; photodetectors

Indexed keywords

GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ALLOYS; PHASE NOISE; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

ELECTRONIC SIGNALS; FREQUENCY COMBS; MICROWAVE PHOTONICS; MICROWAVE SIGNALS; NONLINEAR SATURATION; OPTICAL PULSE TRAIN; PHASE FLUCTUATION; PHOTONIC GENERATIONS;

PHOTODIODES;

EID: 79951843123     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2011.2109703     Document Type: Article

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