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Current Applied Physics

Volumn 11, Issue 3, 2011, Pages 521-524

Metal-Insulator-like transition in the LaAlO3/BaTiO3 interface

(4) Chae, S C a Choi, W S a Yoo, H K a Kang, B S b

a Seoul National University (South Korea)

b Hanyang University (South Korea)

Author keywords

2DEG; BaTiO3; Ferroelectric; LaAlO3; MIT

Indexed keywords

2DEG; BATIO3; FERROELECTRIC; LAALO3; MIT;

BARIUM COMPOUNDS; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; FERROELECTRICITY; LANTHANUM ALLOYS; METAL INSULATOR BOUNDARIES; METALS; OXYGEN; OXYGEN VACANCIES; PARTIAL PRESSURE; POSITIVE IONS; PULSED LASER DEPOSITION;

METAL INSULATOR TRANSITION;

EID: 79951669971 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2010.09.006 Document Type: Article

Times cited : (5)

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