Dielectric enhancement of the exciton energies in laser-dressed near-surface quantum wells

Superlattices and Microstructures

Volumn 48, Issue 4, 2010, Pages 416-425

  Niculescu, E C ^a   Eseanu, N ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Exciton states; Image charge; Laser dressed potential; Quantum well

Indexed keywords

CAP LAYER THICKNESS; CAPPED LAYER; CARRIER CONFINEMENTS; DIELECTRIC ENHANCEMENT; EFFECTIVE MASS APPROXIMATION; EXCITON EMISSION; EXCITON ENERGIES; EXCITON LINES; EXCITON STATE; EXCITON TRANSITION ENERGY; EXPERIMENTAL DATA; HIGH-FREQUENCY LASERS; IMAGE CHARGES; INGAAS/GAAS; INTER-BAND TRANSITION; INTERBAND; LASER FIELDS; LASER INTENSITIES; LASER PARAMETERS; NEAR-SURFACE; QUANTUM WELL; THEORETICAL STUDY;

COULOMB INTERACTIONS; EMISSION SPECTROSCOPY; EXCITONS; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 77956882626     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2010.06.004     Document Type: Article

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