SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 530-533

Epitaxial growth of Fe/MgO/Ge(0 0 1) heterostructures

(4) Cantoni, M a Petti, D a Rinaldi, C a Bertacco, R a

a POLITECNICO DI MILANO (Italy)

Author keywords

Epitaxy; Germanium; Magnesium oxide; MOS heterostructure

Indexed keywords

CHEMICAL INTERDIFFUSION; CLEAN SURFACES; CRYSTAL QUALITIES; CRYSTALLINITIES; ELECTRICAL PROPERTY; EPITAXIAL STRUCTURE; EPITAXY; GE(0 0 1); HETEROSTRUCTURES; INTERFACIAL CHEMICALS; MAGNESIUM OXIDE; MGO BARRIER; MOS HETEROSTRUCTURE; POST ANNEALING; ROOM TEMPERATURE; SEMICONDUCTOR INTERFACES; SPINTRONICS; TUNNELING DEVICE;

CRYSTALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GERMANIUM; MAGNESIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR GROWTH;

HETEROJUNCTIONS;

EID: 79751531247 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.09.016 Document Type: Conference Paper

Times cited : (12)

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