Spin-coated organic ferroelectric films for non-volatile memories

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 2, 2011, Pages 330-342

  Müller, Klaus ^a   Henkel, Karsten ^a   Mandal, Dipankar ^b   Seime, Bernd ^a   Paloumpa, Ioanna ^a   Schmeißer, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b JADAVPUR UNIVERSITY   (India)

Author keywords

copolymers; device characterization; field effect transistors; metal ferroelectric insulator semiconductor capacitors; NEXAFS

Indexed keywords

ADAPTED SYSTEMS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CROSS BAR; DEVICE CHARACTERIZATION; DIPOLE ALIGNMENT; FERROELECTRIC COMPONENT; FERROELECTRIC COPOLYMERS; FERROELECTRIC DIPOLES; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC LAYERS; FERROELECTRIC SWITCHING; LOW COSTS; MEMORY DEVICE; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR CAPACITORS; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE; NEXAFS; NON-VOLATILE MEMORIES; ORGANIC MATERIALS; POLYVINYLIDENE FLUORIDES; PROCESSABILITY; ROOM TEMPERATURE; TRIFLUOROETHYLENE; ULTRA-THIN;

CAPACITORS; COPOLYMERIZATION; COPOLYMERS; ELECTROMAGNETIC WAVE ABSORPTION; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; ORGANIC FIELD EFFECT TRANSISTORS; PLASTIC PRODUCTS; ULTRATHIN FILMS;

FERROELECTRIC FILMS;

EID: 79751507978     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026593     Document Type: Article

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