Electron spin relaxation in intrinsic bulk InP semiconductor

Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

  Ma, Hong ^a   Jin, Zuanming ^a   Wang, Lihua ^a   Ma, Guohong ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLINGS; BAND GAP RENORMALIZATION EFFECTS; CARRIER DENSITY; D'YAKONOV-PEREL; DENSITY DEPENDENCE; ELECTRON SPIN DYNAMICS; ELECTRON-SPIN RELAXATION; FEMTOSECOND PULSE; INP; MAXIMUM VALUES; PUMP PHOTONS; PUMP PROBE; REFLECTIVITY CHANGES; REFLECTIVITY TECHNIQUE; ROOM TEMPERATURE; THEORETICAL PREDICTION; TIME-RESOLVED;

ELECTROMAGNETIC PULSE; ELECTRONS; INDIUM PHOSPHIDE; PUMPS; REFLECTION; RELAXATION PROCESSES; SEMICONDUCTING INDIUM;

SPIN DYNAMICS;

EID: 79551674539     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3533965     Document Type: Article

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